Bilkent University
Department of Computer Engineering
SEMINAR
Enhancing the Lifetime of Non-Volatile Memory:A case for utilizing multi-level storage capability of PCMs
Prof.Hamid Sarbazi-Azad
Abstract: Limited endurance problem and low cell reliability are main challenges of Non-Volatile Memories (NVMs). Phase change memory (PCM) is as an attractive and scalable alternative to DRAM due to its lower read power consumption and not requiring refreshes. Our experiments confirm that during write operations, an extensive non-uniformity in bitflips is exhibited. To reduce this non-uniformity, we present a byte-level shifting scheme, which reduces write pressure over hot cells of blocks. Additionally, this shifting mechanism can be used for error recovery purpose by using the multi-level cell (MLC) capability of PCMs and manipulating the data block to recover faulty cells. Evaluation results for multi-threaded workloads reveal 14-25% improvement in lifetime over existing state-of-the-art schemes.
Bio: Hamid Sarbazi-Azad is currently professor of computer science and engineering at Sharif University of Technology, Tehran, Iran. His research interests include computer architecture, memory system, storage system, NoCs and SoCs, parallel and distributed systems, and social networks, on which he has published over 400 refereed papers. He received Khwarizmi International Award in 2006, TWAS Young Scientist Award in engineering sciences in 2007, and Sharif University Distinguished Researcher awards in years 2004, 2007, 2008, 2010 and 2013 and distinguished book author in years 2020 and 2022. He is now an associate editor of the ACM Computing Surveys, IEEE Computer Architecture Letters, and Elsevier’s Computers and Electrical Engineering
DATE: May 3, Wednesday @ 13:40
Place: EA 409
Host:Prof.Dr.Özcan Öztürk email:ozturk@cs.bilkent.edu.tr Phone:3444